OFF-state trapping phenomena in GaN HEMTs: Interplay...

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Microelectronics Reliability 2020 / 10

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

Canato, E., Meneghini, M., De Santi, C., Masin, F., Stockman, A., Moens, P., Zanoni, E., Meneghesso, G.
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Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2020.113841
Date:
October, 2020
File:
PDF, 1.19 MB
2020
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