Quantitative Analysis of Si 1-x...

Quantitative Analysis of Si 1-x Ge x using Convergent Beam Electron Diffraction for Extinction Distance Measurements.

Delille, D., Pantel, R., Vincent, G., Van Cappellen, E.
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Volume:
6
Journal:
Microscopy and Microanalysis
DOI:
10.1017/S1431927600037910
Date:
August, 2000
File:
PDF, 647 KB
2000
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