Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2020 / 11 Vol. 38; Iss. 6
Postdeposition annealing effect on the reliability of atomic-layer-deposited Al 2 O 3 films on GaN
Horikawa, Kiyotaka, Okubo, Satoshi, Kawarada, Hiroshi, Hiraiwa, AtsushiVolume:
38
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/6.0000531
Date:
November, 2020
File:
PDF, 4.52 MB
2020