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A high-speed MIM resistive memory cell with an inherent vanadium selector
Lin, Chih-Yang, Tseng, Yi-Ting, Chen, Po-Hsun, Chang, Ting-Chang, Eshraghian, Jason K., Wang, Qiwen, Lin, Qi, Tan, Yung-Fang, Tai, Mao-Chou, Hung, Wei-Chun, Huang, Hui-Chun, Lu, Wei D., Sze, Simon M.Volume:
21
Journal:
Applied Materials Today
DOI:
10.1016/j.apmt.2020.100848
Date:
December, 2020
File:
PDF, 3.23 MB
2020