GaN nanocrystals obtained by Ga and N implantations and...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2020 / 12 Vol. 485

GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers

Aggar, L., Bradai, D., Bourezg, Y.I., Abdesselam, M., Chami, A.C., Mocuta, C., Thiaudiere, D., Speisser, C., Muller, D., Bouillet, C., Le Normand, F.
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Volume:
485
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2020.10.012
Date:
December, 2020
File:
PDF, 6.30 MB
2020
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