The effect of vacancy-impurity complexes in silicon on the currentâvoltage characteristics of pân junctions
Bulyarskiy, Sergey V., Lakalin, Alexander V., Saurov, Mikhail A., Gusarov, Georgy G.Volume:
128
Journal:
Journal of Applied Physics
DOI:
10.1063/5.0023411
Date:
October, 2020
File:
PDF, 1.39 MB
2020