Comparative Results of Low Temperature Annealing of Lightly...

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Kozlovski, Vitalii V., Korolkov, Oleg, Lebedev, Alexander A., Toompuu, Jana, Sleptsuk, Natalja
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Volume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.231
Date:
July, 2020
File:
PDF, 1.09 MB
2020
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