1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability
Uchida, Kosuke, Hiyoshi, Toru, Saito, Yu, Egusa, Hiroshi, Kaneda, Tatsushi, Oomori, Hirotaka, Tsuno, TakashiVolume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.776
Date:
July, 2020
File:
PDF, 1.15 MB
2020