Epitaxial growth and material properties of GaAs on Si...

Journal of Crystal Growth 1986 Vol. 77; Iss. 1-3

Epitaxial growth and material properties of GaAs on Si grown by MOCVD

Tetsuo Soga, Shuzo Hattori, Shiro Sakai, Masayoshi Umeno
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Volume:
77
Year:
1986
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(86)90343-x
File:
PDF, 372 KB
english, 1986
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