Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Isamu Akasaki, Hiroshi Amano, Yasuo Koide, Kazumasa Hiramatsu, Nobuhiko SawakiVolume:
98
Year:
1989
Language:
english
Pages:
11
DOI:
10.1016/0022-0248(89)90200-5
File:
PDF, 887 KB
english, 1989