Modelling of the growth of GaAs by the LEC technique: II....

Modelling of the growth of GaAs by the LEC technique: II. Thermal stress distribution and influence of interface shape

G.O. Meduoye, K.E. Evans, D.J. Bacon
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Volume:
97
Year:
1989
Language:
english
Pages:
11
DOI:
10.1016/0022-0248(89)90574-5
File:
PDF, 808 KB
english, 1989
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