Epilayers with extremely low dislocation densities grown by...

Journal of Crystal Growth 1989 Vol. 96; Iss. 4

Epilayers with extremely low dislocation densities grown by isoelectronic doping of hydride VPE grown InP

R. Westphalen, H. Jürgensen, P. Balk
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Volume:
96
Year:
1989
Language:
english
Pages:
3
DOI:
10.1016/0022-0248(89)90660-x
File:
PDF, 204 KB
english, 1989
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