Growth of single crystal GaN substrate using hydride vapor...

Journal of Crystal Growth 1990 / 1 Vol. 99; Iss. 1-4

Growth of single crystal GaN substrate using hydride vapor phase epitaxy

Naniwae, Kouichi, Itoh, Shigetoshi, Amano, Hiroshi, Itoh, Kenji, Hiramatsu, Kazumasa, Akasaki, Isamu
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Volume:
99
Language:
english
Pages:
4
Journal:
Journal of Crystal Growth
DOI:
10.1016/0022-0248(90)90548-y
Date:
January, 1990
File:
PDF, 259 KB
english, 1990
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