Reduction of dislocations in InGaAs layer on GaAs using...

Journal of Crystal Growth 1991 Vol. 115; Iss. 1-4

Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth

Kiyoko Kato, Toshihiro Kusunoki, Chisato Takenaka, Toshiyuki Tanahashi, Kazuo Nakajima
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
115
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(91)90734-m
File:
PDF, 521 KB
english, 1991
Conversion to is in progress
Conversion to is failed