Study of microdefects and their distribution in dislocation-free Si-doped HB GaAs by X-ray diffuse scattering on triple-crystal diffractometer
L.A. Charniy, A.N. Morozov, V.T. Bublik, K.D. Scherbachev, I.V. Stepantsova, V.M. KaganerVolume:
118
Year:
1992
Language:
english
Pages:
13
DOI:
10.1016/0022-0248(92)90061-m
File:
PDF, 1.16 MB
english, 1992