Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges

Materials Science Forum 2020 / 7 Vol. 1004

Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges

Takeyama, Akinori, Shimizu, Keigo, Makino, Takahiro, Yamazaki, Yuichi, Kuroki, Shin Ichiro, Tanaka, Yasunori, Ohshima, Takeshi
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Volume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.1109
Date:
July, 2020
File:
PDF, 321 KB
2020
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