Influence of Shallow Pits and Device Design of 4H-SiC VDMOS...

Materials Science Forum 2020 / 7 Vol. 1004

Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping

Kocher, Matthias, Schlichting, Holger, Kallinger, Birgit, Rommel, Mathias, Bauer, Anton J., Erlbacher, Tobias
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Volume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.299
Date:
July, 2020
File:
PDF, 1.78 MB
2020
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