Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs

Materials Science Forum 2020 / 7 Vol. 1004

Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs

Berens, Judith, Pobegen, Gregor, Grasser, Tibor
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Volume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.652
Date:
July, 2020
File:
PDF, 404 KB
2020
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