A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to...

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IEEE Journal of Solid-State Circuits 2020

A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs

Kouchi, Toshiyuki, Kakoi, Mami, Kumazaki, Noriyasu, Sugahara, Akio, Imamoto, Akihiro, Kajiyama, Yasufumi, Terada, Yuri, Sanad, Bushnaq, Kanagawa, Naoaki, Kodama, Takuyo, Fukuda, Ryo, Komai, Hiromitsu,
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Year:
2020
Journal:
IEEE Journal of Solid-State Circuits
DOI:
10.1109/jssc.2020.3028393
File:
PDF, 6.88 MB
2020
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