Energy-Gap Opening Near the Dirac Point after the...

Semiconductors 2020 / 09 Vol. 54; Iss. 9

Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2

Kaveev, A. K., Banshchikov, A. G., Terpitskiy, A. N., Golyashov, V. A., Tereshchenko, O. E., Kokh, K. A., Estyunin, D. A., Shikin, A. M.
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Volume:
54
Journal:
Semiconductors
DOI:
10.1134/S1063782620090146
Date:
September, 2020
File:
PDF, 2.77 MB
2020
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