Development of highly reliable BiFeO3/HfO2/Silicon gate...

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Journal of Materials Science: Materials in Electronics 2020 / 10

Development of highly reliable BiFeO3/HfO2/Silicon gate stacks for ferroelectric non-volatile memories in IoT applications

Tripathi, Pramod Narayan, Ojha, Sanjeev Kumar, Nazarov, Alexey
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Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-020-04713-9
Date:
October, 2020
File:
PDF, 2.24 MB
2020
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