High-temperature etching of SiC in SF6/O2 inductively...

Scientific Reports 2020 / 12 Vol. 10; Iss. 1

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Osipov, Artem A., Iankevich, Gleb A., Speshilova, Anastasia B., Osipov, Armenak A., Endiiarova, Ekaterina V., Berezenko, Vladimir I., Tyurikova, Irina A., Tyurikov, Kirill S., Alexandrov, Sergey E.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
10
Journal:
Scientific Reports
DOI:
10.1038/s41598-020-77083-1
Date:
December, 2020
File:
PDF, 2.56 MB
2020
Conversion to is in progress
Conversion to is failed