![](/img/cover-not-exists.png)
Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon
Cho, Min Su, Mun, Hye Jin, Lee, Sang Ho, Jang, Jaewon, Bae, Jin-Hyuk, Kang, In ManVolume:
126
Journal:
Applied Physics A
DOI:
10.1007/s00339-020-04125-w
Date:
December, 2020
File:
PDF, 3.22 MB
2020