TCAD Simulation Study of ESD Behavior of InGaAs/InP...

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Zhu, Zhihua, Yang, Zhaonian, Zhang, Yingtao, Fan, Xiaomei, Liou, Juin Jei, Fan, Wenbing
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Volume:
10
Journal:
Crystals
DOI:
10.3390/cryst10111059
Date:
November, 2020
File:
PDF, 4.80 MB
2020
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