TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs
Zhu, Zhihua, Yang, Zhaonian, Zhang, Yingtao, Fan, Xiaomei, Liou, Juin Jei, Fan, WenbingVolume:
10
Journal:
Crystals
DOI:
10.3390/cryst10111059
Date:
November, 2020
File:
PDF, 4.80 MB
2020