![](/img/cover-not-exists.png)
Influence of injection rate on carrier lifetime degradation in p-type silicon irradiated by 4.5 MeV electrons
D. Bielle-Daspet, M. PougetVolume:
93
Year:
1971
Language:
english
Pages:
3
DOI:
10.1016/0029-554x(71)90065-6
File:
PDF, 177 KB
english, 1971