Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress
Ausserlechner, Udo, Holliber, Michael, Kollmitzer, Benjamin, Heinz, RichardVolume:
174
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2020.107918
Date:
December, 2020
File:
PDF, 7.26 MB
2020