The electrical properties of phosphorus doped silicon...

Solid-State Electronics 1973 Vol. 16; Iss. 7

The electrical properties of phosphorus doped silicon layers obtained by ion implantation through a passivating oxide

J. Verjans, R. van Overstraeten, H. Pattyn, R. de Keersmaecker
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
16
Year:
1973
Language:
english
Pages:
7
DOI:
10.1016/0038-1101(73)90174-3
File:
PDF, 399 KB
english, 1973
Conversion to is in progress
Conversion to is failed