Electron bombardment effect on the reverse I–V characteristics and tensosensibility of p+-nGaAs diodes
V.N. Brudnyi, A.A. Vilisov, V.I. Gaman, V.M. DiamondVolume:
26
Year:
1983
Language:
english
Pages:
5
DOI:
10.1016/0038-1101(83)90028-x
File:
PDF, 399 KB
english, 1983