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An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
Allen R. Hefner Jr, David L. BlackburnVolume:
31
Year:
1988
Language:
english
Pages:
20
DOI:
10.1016/0038-1101(88)90025-1
File:
PDF, 1.79 MB
english, 1988