Charge trapping and dielectric breakdown in MOS devices in...

Solid-State Electronics 1989 Vol. 32; Iss. 9

Charge trapping and dielectric breakdown in MOS devices in 77–400 K temperature range

C.-L. Huang, S.A. Grot, G.Sh. Gildenblat, V. Bolkhovsky
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Volume:
32
Year:
1989
Language:
english
Pages:
9
DOI:
10.1016/0038-1101(89)90011-7
File:
PDF, 543 KB
english, 1989
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