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Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition
G.A. Tomasch, Y.-W. Kim, L.C. Markert, N.-E. Lee, J.E. GreeneVolume:
223
Year:
1993
Language:
english
Pages:
6
DOI:
10.1016/0040-6090(93)90523-r
File:
PDF, 1.22 MB
english, 1993