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On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1−xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor
M. Caymax, J. Poortmans, A. Van Ammel, J. Vanhellemont, M. Libezny, J. Nijs, R. MertensVolume:
241
Year:
1994
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(94)90452-9
File:
PDF, 469 KB
english, 1994