Degradation mechanisms in high power InGaN semiconductor...

Microelectronics Reliability 2020 / 11 Vol. 114

Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements

Piva, F., De Santi, C., Buffolo, M., Taffarel, M., Meneghesso, G., Zanoni, E., Meneghini, M.
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Volume:
114
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2020.113786
Date:
November, 2020
File:
PDF, 611 KB
2020
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