High hole mobility and low leakage thin-body (In)GaSb...

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IEEE Journal of the Electron Devices Society 2020

High hole mobility and low leakage thin-body (In)GaSb p-MOSFETs grown on high-bandgap AlGaSb

Kim, Sang Hyeon, Roh, Ilpyo, Han, Jae Hoon, Geum, Dae-Myeong, Kim, Seong Kwang, Kang, Soo Seok, Kang, Hang-Kyu, Lee, Woo Chul, Kim, Seong Keun, Hwang, Do Kyung, Song, Yun Heub, Song, Jin Dong
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Year:
2020
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2020.3039370
File:
PDF, 890 KB
2020
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