Gate Current Partitioning Model for Schottky Gate GaN HEMTs

IEEE Transactions on Electron Devices 2021 / 1 Vol. 68; Iss. 1

Gate Current Partitioning Model for Schottky Gate GaN HEMTs

Debnath, Ankur, Sarkar, Sujan, Pandurang, Khade Ramdas, DasGupta, Nandita, DasGupta, Amitava
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Volume:
68
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.3035552
Date:
January, 2021
File:
PDF, 1.35 MB
2021
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