Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As...

Vacuum 1995 Vol. 46; Iss. 8-10

Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 − xAs cap layer

ZsJ Horváth, A Bosacchi, S Franchi, E Gombia, R Mosca, D Biondelli
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Volume:
46
Year:
1995
Language:
english
Pages:
3
DOI:
10.1016/0042-207x(95)00082-8
File:
PDF, 378 KB
english, 1995
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