Metal-induced n+/n homojunction for ultrahigh electron...

NPG Asia Materials 2020 / 12 Vol. 12; Iss. 1

Metal-induced n+/n homojunction for ultrahigh electron mobility transistors

Park, Ji-Min, Kim, Hyoung-Do, Joh, Hongrae, Jang, Seong Cheol, Park, Kyung, Park, Yun Chang, Nahm, Ho-Hyun, Kim, Yong-Hyun, Jeon, Sanghun, Kim, Hyun-Suk
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Volume:
12
Journal:
NPG Asia Materials
DOI:
10.1038/s41427-020-00271-y
Date:
December, 2020
File:
PDF, 2.40 MB
2020
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