Back-End-of-Line-Based Resistive RAM in 0.13μm...

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IEEE Electron Device Letters 2020

Back-End-of-Line-Based Resistive RAM in 0.13μm Partially-Depleted Silicon-on-Insulator Process for Highly Reliable Irradiation-resistant Application

Zheng, Xu, Liu, Jing, Dong, Danian, Yu, Zhaoan, Song, Jiayou, Liou, Juin J., Xu, Xiaoxin, Yang, Xiaonan
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3037072
File:
PDF, 697 KB
2020
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