[IEEE 2020 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2020.6.16-2020.6.19)] 2020 IEEE Symposium on VLSI Technology - High On-Current 2D nFET of 390 $\mu \mathrm{A}/\mu \mathrm{m}$ at $\mathrm{V}_{\mathrm{DS}} = 1\mathrm{V}$ using Monolayer CVD MoS2 without Intentional Doping

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