Study of Radiation-Induced Defects in p-Type Si1−xGex...

Materials 2020 / 12 Vol. 13; Iss. 24

Study of Radiation-Induced Defects in p-Type Si1−xGex Diodes before and after Annealing

Ceponis, Tomas, Lastovskii, Stanislau, Makarenko, Leonid, Pavlov, Jevgenij, Pukas, Kornelijus, Gaubas, Eugenijus
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Volume:
13
Journal:
Materials
DOI:
10.3390/ma13245684
Date:
December, 2020
File:
PDF, 1.86 MB
2020
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