[IEEE 2020 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2020.6.16-2020.6.19)] 2020 IEEE Symposium on VLSI Technology - Surface Ga-boosted Boron-doped $\mathrm{Si}_{0.5}\mathrm{Geo}_{0.5}$ using In-situ CVD Epitaxy: Achieving $1.1 \times 10^{21}\mathrm{cm}^{-3}$ Active Doping Concentration and $5.7\times 10^{-10}\Omega-\mathrm{cm}^{2}$ Contact Resistivity

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