Annealing behavior of silicon nitride and silicon...

Applied Surface Science 1988 Vol. 33-34; Iss. none

Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method

Takeshi Kamada, Takashi Hirao, Masatoshi Kitagawa, Kentaro Setsune, Kiyotaka Wasa, Tomio Izumi
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Volume:
33-34
Year:
1988
Language:
english
Pages:
7
DOI:
10.1016/0169-4332(88)90421-7
File:
PDF, 262 KB
english, 1988
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