PECVD silicon oxynitride: A new insulator for ISFETs with...

Sensors and Actuators B: Chemical 1991 Vol. 4; Iss. 3-4

PECVD silicon oxynitride: A new insulator for ISFETs with insulator surface modified by chemical grafting

J.M. Chovelon, N. Jaffrezic-Renault, P. Clechet, Y. Cros, J.J. Fombon, M.I. Baraton, P. Quintard
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Volume:
4
Year:
1991
Language:
english
Pages:
5
DOI:
10.1016/0925-4005(91)80140-f
File:
PDF, 469 KB
english, 1991
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