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Evidence of electron trapping in undoped hydrogenated amorphous silicon (a-Si:H) Schottky barriers by the surface photovoltage (SPV) technique — A study of stability in a-Si:H solar cells
Hong-sheng LinVolume:
30
Year:
1993
Language:
english
Pages:
8
DOI:
10.1016/0927-0248(93)90113-h
File:
PDF, 424 KB
english, 1993