Relation of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure
Art J. Nelson, A.M. Gabor, M.A. Contreras, A. Mason, P. Asoka-Kumar, K.G. LynnVolume:
41-42
Year:
1996
Language:
english
Pages:
9
DOI:
10.1016/0927-0248(95)00104-2
File:
PDF, 448 KB
english, 1996