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Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
G. Marcos, A. Rhallabi, P. RansonVolume:
254
Year:
2008
Language:
english
Pages:
9
DOI:
10.1016/j.apsusc.2007.11.051
File:
PDF, 1.23 MB
english, 2008