Improved free-standing GaN Schottky diode characteristics...

Applied Surface Science 2008 Vol. 255; Iss. 5-part-P2

Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing

Arul Chakkaravarthi Arjunan, Deepika Singh, H.T. Wang, F. Ren, Purushottam Kumar, R.K. Singh, S.J. Pearton
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Volume:
255
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.apsusc.2008.08.096
File:
PDF, 912 KB
english, 2008
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