Epitaxial SiC formation induced by medium energy ions on...

Applied Surface Science 2009 Vol. 255; Iss. 15

Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature

Praveen Kumar, Lekha Nair, Santanu Bera, B.R. Mehta, S.M. Shivaprasad
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Volume:
255
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.apsusc.2009.02.075
File:
PDF, 126 KB
english, 2009
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