A sensing circuit for MRAM based on 2MTJ–2T structure

A sensing circuit for MRAM based on 2MTJ–2T structure

Eun-Jung Jang, Seung-Yoen Lee, Hye-Jin Kim, Hyungsoon Shin, Seungjun Lee, Daejung Kim
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Volume:
4
Year:
2004
Language:
english
Pages:
6
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2003.09.007
File:
PDF, 654 KB
english, 2004
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