Threshold energy of formation of an oxygen vacancy defect...

Fusion Engineering and Design 2005 Vol. 75-79; Iss. none

Threshold energy of formation of an oxygen vacancy defect in SiO2 by atomic displacements using molecular dynamics

F. Mota, M.-J. Caturla, J.M. Perlado, E. Dominguez, A. Kubota
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Volume:
75-79
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.fusengdes.2005.06.215
File:
PDF, 104 KB
english, 2005
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